SMF

Eigenvalue asymptotics related to impurities in crystals

Eigenvalue asymptotics related to impurities in crystals

Reiner HEMPEL
     
                
  • Année : 1992
  • Tome : 210
  • Format : Électronique
  • Langue de l'ouvrage :
    Anglais
  • Class. Math. : 35P20, 81Q10
  • Pages : 183-196
  • DOI : 10.24033/ast.186

As a mathematical model for energy levels produced by impurities in a crystal, we study perturbations of a (periodic) Schrödinger operator H=Δ+V by a potential λW, where λ is a real coupling constant and W decays at infinity. Assuming that H has a spectral gap, we ask for the number of eigenvalues which are moved into the gap and cross a fixed level E in the gap, as λ increases. Such “impurity levels” are a basic ingredient in the quantum mechanical theory of the color of crystals (insulators) and of the conductivity of (doped) semi-conductors in solid state physics. In the general case where W is allowed to change its sign, we discuss upper and lower asymptotic bounds for the eigenvalue counting function. We also provide bounds for the total number of eigenvalues crossing E as the height of a repulsive “barrier”, living on a compact set K, tends to . While quasi- ical arguments give some useful hints, it turns out that, in particular, lower bounds are very sensitive and depend highly on the structure of the set K. Here decoupling via natural Dirichlet boundary conditions tends to play a dominating role, e.g. if the set K has many small holes (“swiss cheese”).



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